A relaxation model for memory with high storage density.

نویسندگان

  • C M Bachmann
  • L N Cooper
  • A Dembo
  • O Zeitouni
چکیده

We present a relaxation model for memory based on a generalized coulomb potential. The model has arbitrarily large storage capacity and, in addition, well-defined basins of attraction about stored memory states. The model is compared with the Hopfield relaxation model.

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عنوان ژورنال:
  • Proceedings of the National Academy of Sciences of the United States of America

دوره 84 21  شماره 

صفحات  -

تاریخ انتشار 1987